Photovoltaic device with increased light trapping

ABSTRACT

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device.

CROSS-REFERENCE TO RELATED APPLICATIONS

Under 35 U.S.C. §120, this application is a divisional application andclaims the benefit of priority to U.S. patent application Ser. No.12/605,140, filed Oct. 23, 2009 and U.S. Provisional Patent ApplicationSer. No. 61/107,962, filed Oct. 23, 2008, all of which is incorporatedherein by reference.

BACKGROUND

1. Technical Field

Embodiments of the present invention generally relate to photovoltaic(PV) devices, such as solar cells, with increased efficiency and greaterflexibility and methods for fabricating the same.

2. Description of the Related Art

As fossil fuels are being depleted at ever-increasing rates, the needfor alternative energy sources is becoming more and more apparent.Energy derived from wind, from the sun, and from flowing water offerrenewable, environment-friendly alternatives to fossil fuels, such ascoal, oil, and natural gas. Being readily available almost anywhere onEarth, solar energy may someday be a viable alternative.

To harness energy from the sun, the junction of a solar cell absorbsphotons to produce electron-hole pairs, which are separated by theinternal electric field of the junction to generate a voltage, therebyconverting light energy to electric energy. The generated voltage can beincreased by connecting solar cells in series, and the current may beincreased by connecting solar cells in parallel. Solar cells may begrouped together on solar panels. An inverter may be coupled to severalsolar panels to convert DC power to AC power.

Nevertheless, the currently high cost of producing solar cells relativeto the low efficiency levels of contemporary devices is preventing solarcells from becoming a mainstream energy source and limiting theapplications to which solar cells may be suited. Accordingly, there is aneed for more efficient photovoltaic devices suitable for a myriad ofapplications.

SUMMARY OF THE INVENTION

Embodiments of the present invention generally relate to methods andapparatus for converting electromagnetic radiation, such as solarenergy, into electric energy with increased efficiency when compared toconventional solar cells.

One embodiment of the present invention provides a photovoltaic (PV)device. The PV device generally includes a p⁺-doped layer, an n-dopedlayer disposed above the p⁺-doped layer to form a p-n layer such thatelectric energy is created when photons are absorbed by the p-n layer, awindow layer disposed above the n-doped layer, and an antireflectivecoating disposed above the window layer.

Another embodiment of the present invention provides a PV device. The PVdevice generally includes a p⁺-doped layer, an n-doped layer disposedabove the p⁺-doped layer to form a p-n layer such that electric energyis created when light is absorbed by the p-n layer, a window layerdisposed above the n-doped layer, and a diffuser disposed below thep⁺-doped layer.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above-recited features of the inventioncan be understood in detail, a more particular description of theinvention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 illustrates multiple epitaxial layers for a photovoltaic (PV)unit in cross-section, in accordance with an embodiment of the presentinvention.

FIG. 2 illustrates an antireflective coating added to the semiconductorlayers on the front side of the PV unit, in accordance with anembodiment of the present invention.

FIG. 3 illustrates roughening a window layer before applying theantireflective coating, in accordance with an embodiment of the presentinvention.

FIG. 4 illustrates multiple window layers, wherein the outermost windowlayer is roughened before the antireflective coating is applied, inaccordance with an embodiment of the present invention.

FIG. 5 illustrates a roughened emitter layer on the back side of the PVunit, in accordance with an embodiment of the present invention.

FIG. 6 illustrates a diffuser on the back side of the PV unit, inaccordance with an embodiment of the present invention.

FIG. 7 illustrates dielectric particles and white paint functioning asthe diffuser of FIG. 6, in accordance with an embodiment of the presentinvention.

FIG. 8 illustrates metal particles functioning as the diffuser of FIG.6, in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION

Embodiments of the present invention provide techniques and apparatusfor converting electromagnetic radiation, such as solar energy, intoelectric energy with increased efficiency when compared to conventionalsolar cells.

An Exemplary Photovoltaic Unit

FIG. 1 illustrates various epitaxial layers of a photovoltaic (PV) unit100 in cross-section. The various layers may be formed using anysuitable method for semiconductor growth, such as molecular beam epitaxy(MBE) or metalorganic chemical vapor deposition (MOCVD), on a substrate(not shown).

The PV unit 100 may comprise a window layer 106 formed above thesubstrate and any underlying buffer layer(s). The window layer 106 maycomprise aluminum gallium arsenide (AlGaAs), such as Al_(0.3)Ga_(0.7)As.The window layer 106 may be undoped. The window layer 106 may betransparent to allow photons to pass through the window layer on thefront side of the PV unit to other underlying layers.

A base layer 108 may be formed above the window layer 106. The baselayer 108 may comprise any suitable group III-V compound semiconductor,such as GaAs. The base layer 108 may be monocrystalline and may ben-doped.

As illustrated in FIG. 1, an emitter layer 110 may be formed above thebase layer 108. The emitter layer 110 may comprise any suitable groupIII-V compound semiconductor for forming a heterojunction with the baselayer 108. For example, if the base layer 108 comprises GaAs, theemitter layer 110 may comprise a different semiconductor material, suchas AlGaAs (e.g., Al_(0.3)Ga_(0.7)As). If the emitter layer 110 and thewindow layer 106 both comprise AlGaAs, the Al_(x)Ga_(1-x)As compositionof the emitter layer 110 may be the same as or different than theAl_(y)Ga_(1-y)As composition of the window layer. The emitter layer 110may be monocrystalline and may be heavily p-doped (i.e., p⁺-doped). Thecombination of the base layer 108 and the emitter layer 110 may form anabsorber layer for absorbing photons.

The contact of an n-doped base layer to a p⁺-doped emitter layer createsa p-n layer 112. When light is absorbed near the p-n layer 112 toproduce electron-hole pairs, the built-in electric field may force theholes to the p⁺-doped side and the electrons to the n-doped side. Thisdisplacement of free charges results in a voltage difference between thetwo layers 108, 110 such that electron current may flow when a load isconnected across terminals coupled to these layers.

Rather than an n-doped base layer 108 and a p⁺-doped emitter layer 110as described above, conventional photovoltaic semiconductor devicestypically have a p-doped base layer and an n⁺-doped emitter layer. Thebase layer is typically p-doped in conventional devices due to thediffusion length of the carriers.

Once the emitter layer 110 has been formed, cavities or recesses 114 maybe formed in the emitter layer deep enough to reach the underlying baselayer 108. Such recesses 114 may be formed by applying a mask to theemitter layer 110 using photolithography, for example, and removing thesemiconductor material in the emitter layer 110 not covered by the maskusing any suitable technique, such as wet or dry etching. In thismanner, the base layer 108 may be accessed via the back side of the PVunit 100.

For some embodiments, an interface layer 116 may be formed above theemitter layer 110. The interface layer 116 may comprise any suitablegroup III-V compound semiconductor, such as GaAs. The interface layer116 may be p⁺-doped.

Once the epitaxial layers have been formed, the functional layers of thePV unit 100 (e.g., the window layer 106, the base layer 108, and theemitter layer 110) may be separated from the buffer layer(s) 102 andsubstrate during an epitaxial lift-off (ELO) process.

Exemplary Light Trapping

To achieve efficiency, the absorber layer of an ideal photovoltaic (PV)device would absorb all of the photons impinging on the PV device'sfront side facing the light source since the open circuit voltage(V_(oc)) or short circuit current (I_(sc)) is proportional to the lightintensity. However, several loss mechanisms typically interfere with thePV device's absorber layer seeing or absorbing all of the light reachingthe front side of the device. For example, the semiconductor layers ofthe PV device may be shiny (especially when made of pure silicon) and,therefore, may reflect a substantial portion of the impinging photons,preventing these photons from ever reaching the absorber layer. If twosemiconductor layers (e.g., the window layer and the base layer) have adifferent index of refraction, some of the photons reaching theinterface between these two layers may be reflected according to Snell'sLaw if their angle of incidence is too high, again preventing thesephotons from reaching the absorber layer. Furthermore, the absorberlayer may not absorb all of the impinging photons; some photons may passthrough the absorber layer without affecting any electron-hole pairs.

Accordingly, there is a need for techniques and apparatus to capture thelight impinging on the front side of the PV device such that as manyphotons as possible may be absorbed by the absorber layer and convertedinto electric energy. In this manner, the PV device's efficiency may beincreased.

Apparatus for trapping the light within the semiconductor layers of a PVdevice may be divided into two categories: front side light trapping andback side light trapping. By employing both types of light trapping in aPV device, the idea is that nearly all photons impinging on the PVdevice's front side may be captured and “bounce around” within thesemiconductor layers until the photons are absorbed by the absorberlayer and converted to electric energy.

Exemplary Front Side Light Trapping

FIG. 2 illustrates an antireflective (AR) coating 802 disposed adjacentto the window layer 106 on the front side of the PV unit 100, inaccordance with an embodiment of the present invention. According to itspurpose, the AR coating 802 may comprise any suitable material thatallows light to pass through while preventing light reflection from itssurface. For example, the AR coating 802 may comprise magnesium fluoride(MgF₂), zinc sulfide (ZnS), silicon nitride (SiN), titanium dioxide(TiO₂), silicon dioxide (SiO₂), or any combination thereof. The ARcoating 802 may be applied to the window layer 106 by any suitabletechnique, such as sputtering.

For some embodiments, the window layer 106 may be roughened or texturedbefore applying the antireflective coating 802. FIG. 3 illustrates aroughened window layer 106. Roughening of the window layer 106 may beaccomplished by wet etching or dry etching, for example. Texturing maybe achieved by applying small particles, such as polystyrene spheres, tothe surface of the window layer 106 before applying the AR coating 802.By roughening or texturing the window layer 106, different angles areprovided at the interface between the AR coating 802 and the windowlayer, which may have different indices of refraction. In this manner,more of the incident photons may be transmitted into the window layer106 rather than reflected from the interface between the AR coating 802and the window layer because some photons' angles of incidence are toohigh according to Snell's Law. Thus, roughening or texturing the windowlayer 106 may provide increased light trapping.

Also for some embodiments, the window layer 106 may comprise multiplewindow layers. For these embodiments, the outermost window layer (i.e.,the window layer closest to the front side of the PV unit 100) may beroughened or textured as described above before the antireflectivecoating 802 is applied, as illustrated in FIG. 4. In FIG. 4, the windowlayer 106 comprises a first window layer 1002 disposed adjacent to thebase layer 108 and a second window layer 1004 interposed between thefirst window layer 1002 and the antireflective coating 802. The firstand second window layers 1002, 1004 may comprise any material suitablefor the window layer 106 as described above, such as AlGaAs, buttypically with different compositions. For example, the first windowlayer 1002 may comprise Al_(0.3)Ga_(0.7)As, and the second window layer1004 may comprise Al_(0.1)Ga_(0.9)As. Furthermore, some of the multiplewindow layers may be doped, while others are undoped for someembodiments. For example, the first window layer 1002 may be doped, andthe second window layer 1004 may be undoped.

Exemplary Back Side Light Trapping

For some embodiments, the emitter layer 110 on the back side of the PVunit 100 may be roughened or textured, as described above with respectto the front side, in an effort to increase light trapping. FIG. 5illustrates such a roughened emitter layer 110.

FIG. 6 illustrates a diffuser 1202 on the back side of the PV unit 100in an effort to increase the amount of light captured by the absorberlayer. Rather than reflecting photons similar to a mirror where theangle of reflectance equals the angle of incidence, the purpose of thediffuser 1202 is to diffuse or scatter photons that pass through theabsorber layer without being absorbed. For some embodiments, thediffuser 1202 may be covered with a reflective layer 1204. In thismanner, the diffuser 1202 may provide new angles to incident photons,some of which may be redirected back to the interior of the PV unit. Forother photons that are directed to the back side of the PV unit, thereflective layer 1204 may redirect these photons back through thediffuser 1202 and towards the interior of the PV unit. Although some ofthe light may be absorbed by the diffuser 1202 as the photons arescattered and redirected inside, much of the light is redirected to theabsorber layer to be absorbed and converted into electric energy,thereby increasing efficiency. Conventional PV devices without adiffuser and a reflective layer may not be able to recapture photonsthat reach the back side of the device without being absorbed initiallyby the absorber layer.

For some embodiments, the diffuser 1202 may comprise dielectricparticles 1302, as illustrated in FIG. 7. The dielectric particles maycomprise any suitable material which is electrically insulative and doesnot absorb light. The dielectric particles 1302 may have a diameter inrange from about 0.2 to 2.0 μm. The dielectric particles 1302 may becovered by white paint 1304, which reflects light and may act as thereflective layer for redirecting photons back to the interior of the PVunit 100. The white paint 1304 may comprise TiO₂, for example.

For some embodiments, the diffuser 1202 may comprise metal particles1402, as illustrated in FIG. 8. The metal particles 1402 may reflectphotons that were not absorbed by the absorber layer, and by having amultitude of metal particles 1402, the photons may be scattered indifferent directions several times before being redirected to theinterior of the PV unit 100. The metal particles 1402 may have adiameter of about 150 to 200 nm, functioning as relatively compactscatterers. With thinner particles in the diffuser 1202, the thicknessof the PV unit 100 may be kept smaller, thereby maintaining the desiredflexibility of the PV unit 100.

Because the metal particles 1402 are electrically conductive, lateralsurfaces of the interface layer 116 may be passivated to prevent themetal particles 1402 from interfering with the operation of the device.The interface layer 116 may be passivated using any suitable passivationmethod, such as chemical vapor deposition (CVD) or plasma-enhanced CVD(PECVD). The passivation 1404 may comprise any suitable electricallynon-conductive material, such as silicon nitride (SiN), SiO_(x),TiO_(x), TaO_(x), zinc sulfide (ZnS), or any combination thereof.Furthermore, for some embodiments, a dielectric layer 1406 may be formedabove the metal particles 1402 in an effort to avoid shunting any backside contacts, as depicted in FIG. 8. The dielectric layer 1406 maycomprise any suitable electrically insulative material, such as SiO₂,SiN, or glass.

While the foregoing is directed to embodiments of the invention, otherand further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

The invention claimed is:
 1. A photovoltaic device, comprising: aninterface layer comprising a Group III-V compound semiconductor; ap⁺-doped layer below the interface layer, wherein recesses are formed inthe p⁺-doped layer, wherein a top surface of the p⁺-doped layer isroughened to provide different angles for increased light trapping, andwherein a length in the horizontal direction of the p⁺-doped layer islonger than a length in the horizontal direction of the interface layer;a n-doped layer below and in direct contact with the p⁺-doped layerforming a p-n heterojunction; a window layer disposed below the n-dopedlayer, wherein the window layer is textured prior to applying anantireflective coating; and an antireflective coating disposed below thewindow layer.
 2. The photovoltaic device of claim 1, wherein the n-dopedlayer comprises n-GaAs.
 3. The photovoltaic device of claim 1, whereinthe p⁺-doped layer comprises p⁺-AlGaAs.
 4. The photovoltaic device ofclaim 3, wherein the p⁺-doped layer comprises p⁺-Al_(0.3)Ga_(0.7)As. 5.The photovoltaic device of claim 1, wherein the window layer comprisesAlGaAs.
 6. The photovoltaic device of claim 5, wherein the window layercomprises Al_(0.3)Ga_(0.7)As.
 7. The photovoltaic device of claim 1,wherein the window layer has a thickness of about 20 nm.
 8. Thephotovoltaic device of claim 1, wherein the antireflective coatingcomprises MgF₂, ZnS, SiN, TiO₂, SiO₂, or combinations thereof.
 9. Aphotovoltaic device, comprising: an interface layer comprising a GroupIII-V compound semiconductor; a p⁺-doped layer below the interfacelayer, wherein recesses are formed in the p⁺-doped layer, wherein a topsurface of the p⁺-doped layer is roughened to provide different anglesfor increased light trapping, and wherein a length in the horizontaldirection of the p⁺-doped layer is longer than a length in thehorizontal direction of the interface layer; a n-doped layer below andin direct contact with the p⁺-doped layer forming a p-n heterojunction;a first window layer disposed below the n-doped layer; a second windowlayer below the first window layer; and an antireflective coatingdisposed below the second window layer, wherein a bottom surface of thesecond window layer directly adjacent to the antireflective coating isroughened to provide different angles for increased light trapping. 10.The photovoltaic device of claim 9, wherein the first window layer andthe second window layer comprise AlGaAs, but with differentcompositions.
 11. The photovoltaic device of claim 9, wherein the firstwindow layer is doped and the second window layer is undoped.